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2” Free-Standing GaN Substrates

MOQ :1 piece

Lead Time : Days

Product details

Supply Ability

  • Warranty(Year):1 Year

Product Specifications

Product Description

2” Free-Standing GaN Substrates

Specifications:

Item  GaN-FS-N   GaN-FS-SI

Dimensions  Ф 50.8mm ± 1mm

Thickness 300 ± 25 μm

Useable Surface Area LD Level > 90%

 LED Level > 78%

Orientation C-axis(0001) ± 0.5°

Orientation Flat (1-100) ± 0.5°, 16.0 ± 1.0mm

Secondary Orientation Flat (11-20) ± 3°, 8.0 ± 1.0mm

TTV(Total Thickness Variation) ≤15 μm

BOW ≤20 μm

Conduction Type N-type Semi-Insulating

Resistivity(300K) < 0.5 Ω·cm >106 Ω·cm

Dislocation Density Less than 5x106 cm-2

Polishing Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground

Package: Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

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