2” Free-Standing GaN Substrates
2” Free-Standing GaN Substrates
MOQ :1 piece
Lead Time : Days
Seller Support : Trade Authenticity Guaranteed & Accepting
Payment : L/C,T/T
Product details
Supply Ability
- Warranty(Year):1 Year
Product Specifications
Product Description
2” Free-Standing GaN Substrates Specifications: Item GaN-FS-N GaN-FS-SI Dimensions Ф 50.8mm ± 1mm Thickness 300 ± 25 μm Useable Surface Area LD Level > 90% LED Level > 78% Orientation C-axis(0001) ± 0.5° Orientation Flat (1-100) ± 0.5°, 16.0 ± 1.0mm Secondary Orientation Flat (11-20) ± 3°, 8.0 ± 1.0mm TTV(Total Thickness Variation) ≤15 μm BOW ≤20 μm Conduction Type N-type Semi-Insulating Resistivity(300K) < 0.5 Ω·cm >106 Ω·cm Dislocation Density Less than 5x106 cm-2 Polishing Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground Package: Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.
You May Like
- Free Member
- Trade Assurance
Business Type : Manufacturer
Company Location:
Year Established: 17YRS