2” Free-Standing GaN Substrates
2” AlN Templates
MOQ : piece
Lead Time : Days
Seller Support : Trade Authenticity Guaranteed & Accepting
Payment : L/C,T/T
Product details
Supply Ability
- Warranty(Year):1 Year
Product Specifications
Product Description
性能参数Specifications:
产品型号Item | AlN-T |
尺寸Dimensions | Ф 2” |
衬底 Substrate | Sapphire, SiC, GaN |
厚度Thickness | Standard: 1500nm +/- 10% 10~5000nm Customized thickness |
晶体取向Orientation | C-axis(0001) ± 1° |
导电类型Conduction Type | Semi-Insulating |
位错密度Dislocation Density | XRD FWHM of (0002) < 500 arcsec. XRD FWHM of (10-12) < 900 arcsec |
有效面积Useable Surface Area | > 80% |
抛光Polishing | Standard: SSP Option: DSP |
包装Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
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Business Type : Manufacturer
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Year Established: 18YRS