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Non-Polar Freestanding GaN Substrates

MOQ : piece

Lead Time : Days

Product details

Supply Ability

  • Warranty(Year):1 Year

Product Specifications

Product Description

Non-Polar Freestanding GaN Substratesa-plane and m-plane

性能参数Specifications:

产品型号Item

GaN-FS-a

GaN-FS-m

尺寸Dimensions

5.0mm×5.0mm

5.0mm×10.0mm

5.0mm×20.0mm

Customized Size 

厚度Thickness

300 ± 25 μm

晶体取向Orientation

a-plane and m-plane ± 1°

TTV(Total Thickness Variation)

15 μm

弯曲度BOW

20 μm

导电类型Conduction Type

N-type

Semi-Insulating

电阻率Resistivity(300K)

< 0.5 Ω·cm

>106 Ω·cm

位错密度Dislocation Density

Less than 5x106 cm-2

有效面积Useable Surface Area

> 90%

抛光Polishing

Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground

包装Package

Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

* Other thickness, size and offcut options available

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